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Message-id: <1523873525-23718-9-git-send-email-b.zolnierkie@samsung.com>
Date: Mon, 16 Apr 2018 12:11:59 +0200
From: Bartlomiej Zolnierkiewicz <b.zolnierkie@...sung.com>
To: Eduardo Valentin <edubezval@...il.com>
Cc: Zhang Rui <rui.zhang@...el.com>,
Krzysztof Kozlowski <krzk@...nel.org>,
Kukjin Kim <kgene@...nel.org>,
Daniel Lezcano <daniel.lezcano@...aro.org>,
linux-samsung-soc@...r.kernel.org, linux-pm@...r.kernel.org,
linux-kernel@...r.kernel.org, b.zolnierkie@...sung.com
Subject: [PATCH 08/14] thermal: exynos: remove parsing of
samsung,tmu[_min,_max]_efuse_value properties
Since pdata efuse values are SoC (not platform) specific just move
them from platform data to struct exynos_tmu_data instance. Then
remove parsing of samsung,tmu[_,min_,max]_efuse_value properties.
There should be no functional changes caused by this patch.
Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnierkie@...sung.com>
---
drivers/thermal/samsung/exynos_tmu.c | 49 +++++++++++++++++++++++-------------
drivers/thermal/samsung/exynos_tmu.h | 7 ------
2 files changed, 32 insertions(+), 24 deletions(-)
diff --git a/drivers/thermal/samsung/exynos_tmu.c b/drivers/thermal/samsung/exynos_tmu.c
index 1fa162d..9a0e961 100644
--- a/drivers/thermal/samsung/exynos_tmu.c
+++ b/drivers/thermal/samsung/exynos_tmu.c
@@ -185,6 +185,9 @@
* @clk: pointer to the clock structure.
* @clk_sec: pointer to the clock structure for accessing the base_second.
* @sclk: pointer to the clock structure for accessing the tmu special clk.
+ * @efuse_value: SoC defined fuse value
+ * @min_efuse_value: minimum valid trimming data
+ * @max_efuse_value: maximum valid trimming data
* @temp_error1: fused value of the first point trim.
* @temp_error2: fused value of the second point trim.
* @regulator: pointer to the TMU regulator structure.
@@ -207,6 +210,9 @@ struct exynos_tmu_data {
struct work_struct irq_work;
struct mutex lock;
struct clk *clk, *clk_sec, *sclk;
+ u32 efuse_value;
+ u32 min_efuse_value;
+ u32 max_efuse_value;
u16 temp_error1, temp_error2;
struct regulator *regulator;
struct thermal_zone_device *tzd;
@@ -283,20 +289,18 @@ static int code_to_temp(struct exynos_tmu_data *data, u16 temp_code)
static void sanitize_temp_error(struct exynos_tmu_data *data, u32 trim_info)
{
- struct exynos_tmu_platform_data *pdata = data->pdata;
-
data->temp_error1 = trim_info & EXYNOS_TMU_TEMP_MASK;
data->temp_error2 = ((trim_info >> EXYNOS_TRIMINFO_85_SHIFT) &
EXYNOS_TMU_TEMP_MASK);
if (!data->temp_error1 ||
- (pdata->min_efuse_value > data->temp_error1) ||
- (data->temp_error1 > pdata->max_efuse_value))
- data->temp_error1 = pdata->efuse_value & EXYNOS_TMU_TEMP_MASK;
+ (data->min_efuse_value > data->temp_error1) ||
+ (data->temp_error1 > data->max_efuse_value))
+ data->temp_error1 = data->efuse_value & EXYNOS_TMU_TEMP_MASK;
if (!data->temp_error2)
data->temp_error2 =
- (pdata->efuse_value >> EXYNOS_TRIMINFO_85_SHIFT) &
+ (data->efuse_value >> EXYNOS_TRIMINFO_85_SHIFT) &
EXYNOS_TMU_TEMP_MASK;
}
@@ -655,7 +659,6 @@ static int exynos7_tmu_initialize(struct platform_device *pdev)
{
struct exynos_tmu_data *data = platform_get_drvdata(pdev);
struct thermal_zone_device *tz = data->tzd;
- struct exynos_tmu_platform_data *pdata = data->pdata;
unsigned int status, trim_info;
unsigned int rising_threshold = 0, falling_threshold = 0;
int ret = 0, threshold_code, i;
@@ -672,9 +675,9 @@ static int exynos7_tmu_initialize(struct platform_device *pdev)
data->temp_error1 = trim_info & EXYNOS7_TMU_TEMP_MASK;
if (!data->temp_error1 ||
- (pdata->min_efuse_value > data->temp_error1) ||
- (data->temp_error1 > pdata->max_efuse_value))
- data->temp_error1 = pdata->efuse_value & EXYNOS_TMU_TEMP_MASK;
+ (data->min_efuse_value > data->temp_error1) ||
+ (data->temp_error1 > data->max_efuse_value))
+ data->temp_error1 = data->efuse_value & EXYNOS_TMU_TEMP_MASK;
/* Write temperature code for rising and falling threshold */
for (i = (of_thermal_get_ntrips(tz) - 1); i >= 0; i--) {
@@ -1136,13 +1139,6 @@ static int exynos_of_sensor_conf(struct device_node *np,
of_property_read_u32(np, "samsung,tmu_reference_voltage", &value);
pdata->reference_voltage = (u8)value;
- of_property_read_u32(np, "samsung,tmu_efuse_value",
- &pdata->efuse_value);
- of_property_read_u32(np, "samsung,tmu_min_efuse_value",
- &pdata->min_efuse_value);
- of_property_read_u32(np, "samsung,tmu_max_efuse_value",
- &pdata->max_efuse_value);
-
of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);
of_node_put(np);
@@ -1196,6 +1192,9 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_read = exynos4210_tmu_read;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+ data->efuse_value = 55;
+ data->min_efuse_value = 40;
+ data->max_efuse_value = 100;
break;
case SOC_ARCH_EXYNOS3250:
case SOC_ARCH_EXYNOS4412:
@@ -1209,6 +1208,13 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+ data->efuse_value = 55;
+ if (data->soc != SOC_ARCH_EXYNOS5420 &&
+ data->soc != SOC_ARCH_EXYNOS5420_TRIMINFO)
+ data->min_efuse_value = 40;
+ else
+ data->min_efuse_value = 0;
+ data->max_efuse_value = 100;
break;
case SOC_ARCH_EXYNOS5433:
data->tmu_initialize = exynos5433_tmu_initialize;
@@ -1217,6 +1223,9 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+ data->efuse_value = 75;
+ data->min_efuse_value = 40;
+ data->max_efuse_value = 150;
break;
case SOC_ARCH_EXYNOS5440:
data->tmu_initialize = exynos5440_tmu_initialize;
@@ -1225,6 +1234,9 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos5440_tmu_set_emulation;
data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
data->ntrip = 4;
+ data->efuse_value = 0x5d2d;
+ data->min_efuse_value = 16;
+ data->max_efuse_value = 76;
break;
case SOC_ARCH_EXYNOS7:
data->tmu_initialize = exynos7_tmu_initialize;
@@ -1233,6 +1245,9 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+ data->efuse_value = 75;
+ data->min_efuse_value = 15;
+ data->max_efuse_value = 100;
break;
default:
dev_err(&pdev->dev, "Platform not supported\n");
diff --git a/drivers/thermal/samsung/exynos_tmu.h b/drivers/thermal/samsung/exynos_tmu.h
index b111a01..4c49312 100644
--- a/drivers/thermal/samsung/exynos_tmu.h
+++ b/drivers/thermal/samsung/exynos_tmu.h
@@ -45,9 +45,6 @@ enum soc_type {
* @reference_voltage: reference voltage of amplifier
* in the positive-TC generator block
* 0 < reference_voltage <= 31
- * @efuse_value: platform defined fuse value
- * @min_efuse_value: minimum valid trimming data
- * @max_efuse_value: maximum valid trimming data
* @cal_type: calibration type for temperature
*
* This structure is required for configuration of exynos_tmu driver.
@@ -56,10 +53,6 @@ struct exynos_tmu_platform_data {
u8 gain;
u8 reference_voltage;
- u32 efuse_value;
- u32 min_efuse_value;
- u32 max_efuse_value;
-
u32 cal_type;
};
--
1.9.1
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