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Message-ID: <yv2ktkwwu3hadzkw6wb4inqzihndfpwb42svuu25ngmn6eb7c4@hclvcrnsmvvk>
Date: Mon, 10 Nov 2025 13:49:26 +0900
From: Sergey Senozhatsky <senozhatsky@...omium.org>
To: Yuwen Chen <ywen.chen@...mail.com>
Cc: axboe@...nel.dk, akpm@...ux-foundation.org, bgeffon@...gle.com,
licayy@...look.com, linux-block@...r.kernel.org, linux-kernel@...r.kernel.org,
linux-mm@...ck.org, liumartin@...gle.com, minchan@...nel.org, richardycc@...gle.com,
senozhatsky@...omium.org
Subject: Re: [PATCH v4] zram: Implement multi-page write-back
On (25/11/06 09:49), Yuwen Chen wrote:
> For block devices, sequential write performance is significantly
> better than random write. Currently, zram's write-back function
> only supports single-page operations, which fails to leverage
> the sequential write advantage and leads to suboptimal performance.
As a side note:
You almost never do sequential writes to the backing device. The
thing is, e.g. when zram is used as swap, page faults happen randomly
and free up (slot-free) random page-size chunks (so random bits in
zram->bitmap become clear), which then get overwritten (zram simply
picks the first available bit from zram->bitmap) during next writeback.
There is nothing sequential about that, in systems with sufficiently
large uptime and sufficiently frequent writeback/readback events
writeback bitmap becomes sparse, which results in random IO, so your
test tests an ideal case that almost never happens in practice.
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